110 Semiconductor Projects for the Home Constructor by R. M. Marston (Auth.)

By R. M. Marston (Auth.)

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A drain c u r r e n t , flows in t h e device. T h e m a g n i t u d e o f /

F. stages of a r a d i o receiver it m a k e s it possible t o t u n e t h r o u g h a c o m p l e t e w a v e b a n d w i t h o u t n e e d t o adjust t h e v o l u m e c o n t r o l , b o t h strong a n d w e a k s t a t i o n s appearing at e q u a l v o l u m e . F o r n o r m a l listening o n a single s t a t i o n , t h e value of C s h o u l d be 4 increased t o 1 0 0 juF, t o increase t h e d e c a y t i m e of t h e —ve line. T h e 4-5V TO 9V - V e Fig. t. c. c. converter 110 SEMICONDUCTOR PROJECTS 53 circuit t h e n eliminates t h e ' f a d e ' t h a t o c c u r s o n d i s t a n t s t a t i o n s , b u t d o e s n o t i n t r o d u c e excessive a u t o m a t i c v o l u m e a d j u s t m e n t d u r i n g brief pauses in n o r m a l speech.

Q3 h a s 2 near-unity c u r r e n t gain b e t w e e n e m i t t e r a n d collector, so t h e signal c u r r e n t s flowing in R a n d in t h e drain of Ql are virtually identical; 2 46 15 FIELD-EFFECT TRANSISTOR PROJECTS c o n s e q u e n t l y , reasonable voltage gain ( a b o u t 21 dB) o c c u r s b e t w e e n Ql gate a n d Q3 collector. T o p r e v e n t e x t e r n a l circuits w i t h fairly large values of s h u n t i n p u t capacitance reducing t h e effective value of R 2 ( a n d t h u s t h e amplifier's voltage gain) a t high frequencies, t h e o u t p u t of t h e circuit is t a k e n from Q3 collector via g 4 , w h i c h is w i r e d as an e m i t t e r follower.

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