Computer Simulation Studies in Condensed-Matter Physics by D. P. Landau, K. K. Mon, H.-B. Schüttler (auth.), Professor

By D. P. Landau, K. K. Mon, H.-B. Schüttler (auth.), Professor David P. Landau Ph. D., Professor K. K. Mon Ph. D., Professor Heinz-Bernd Schüttler Ph. D. (eds.)

Computer Simulation reports in Condensed-Matter PhysicsVIIIcovers fresh advancements during this box offered on the 1995 workshop, corresponding to new algorithms, tools of research, and conceptual advancements. This quantity consists of three components. the 1st half comprises invited papers that deal with simulational experiences of classical structures. The second half is dedicated to invited papers on quantum systems,including new effects for strongly correlated electron and quantum spin types. the ultimate half includes contributed presentations.

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Extra info for Computer Simulation Studies in Condensed-Matter Physics VIII: Recent Developments Proceedings of the Eighth Workshop Athens, GA, USA, February 20–24, 1995

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Or "Bragg" diffraction conditions are often used in experiments. for which the kinematic theory yields a constant intensity regardless of the surface configuration, in contrast to the experimentally observed strong oscillations. Therefore, the density of surface steps was used in Ref. [4] to model the variations of the RHEED specular-beam intensity during growth. Below, we describe the extensions of the original model which we have adopted to study growth and etching of GaAs(OOl). , the implementation of the additional barriers to hopping at step edges, the process of incorporation of an incoming atom into the growing crystal and modeling of faster vacancy diffusion.

5. The temperature range over which the oscillations disappear (not shown) is very narrow, in qualitative agreement with the experiment. Based on the experimental measurements and our simulations, the explanation of the re-entrant etching oscillations is as follows. Etching creates surface vacancies which = 39 FIG. 7. The surface step density during growth at three different substrate temperatures. The step density increases downwards. The upper two curves in both plots are given offsets to make comparisons easier.

Phys. Lett. 63, 3500 (1993). H. Gilmer and P. Bennerna, J. Appl. Phys. D. H. Gilmer, Adv. Chern. Phys. 40, 157 (1979). [4] S. D. Vvedensky, Phys. Rev. Lett. 58, 2235 (1987). [5] See A. V. Ghaisas, CRC Critical Reviews in Solid State and Materials Science 14, 1 (1988) for a review. H. J. A. Joyce, and J. Zhang, Appl. Phys. Lett. 47, 100 (1985). C. H. Weinberg, J. Chern. Phys. 90, 2824 (1989). [8] A. Zangwill, Physics at Surfaces (Cambridge University Press, Cambridge, England 1988). [9] Z. -T. Lu, and H.

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