By Michael Orshansky
Layout for Manufacturability and Statistical layout: A finished technique offers a accomplished evaluation of equipment that have to be mastered in figuring out state of the art layout for manufacturability and statistical layout methodologies. widely, layout for manufacturability is a collection of concepts that try to repair the systematic resources of variability, reminiscent of these because of photolithography and CMP. Statistical layout, nevertheless, offers with the random resources of variability. either paradigms function inside a standard framework, and their joint accomplished remedy is likely one of the ambitions of this publication and a massive differentation.
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Extra resources for Design for Manufacturability and Statistical Design: A Constructive Approach (Integrated Circuits and Systems)
Reprinted from , c 2003 SPIE). designer’s perspective, the variation of etching bias as a function of layout pattern density is the most important component. This dependence can be classiﬁed into three classes: micro- and macro-loading, and aspect-ratio-dependent etching. In aspect-ratio-dependent etching, the variation of linewidth is dependent on the distance to nearby features . The biases due to photolithography and etching processes are additive. Micro-loading and macro-loading are driven by the common physical mechanism.
Reprinted from , c 2003 IEEE). One of the most interesting practical alternative to the traditional planar MOS transistor is a dual-gate transistor, such as FinFET . Planar MOSFET has one-sided control over the channel and has high leakage. A dual gate MOSFET has more electrostatic control over the channel, and thus has less leakage. The variation of Vth is, in fact, due to several distinct physical causes, including the short-channel eﬀect, Vth dependence on the thickness of the silicon channel (ﬁn), and the uncertainty due to random dopant ﬂuctuations .
Fig. 9. Simulation of the exposure and development of a via hole with extreme ultraviolet lithography. (Reprinted from , c 2003 SPIE). Line edge roughness has impact on all the main electrical device characteristics: the drive current, oﬀ-current, and the threshold voltage. The easiest way to characterize the line edge roughness is to compute its variance. 6 − 9nm, measured on a polysilicon line with Lgate =110nm. However, the knowledge of the variance of LER is insuﬃcient to properly predict at least some parameters, for example, the leakage current.