Fundamental Physics of Amorphous Semiconductors: Proceedings by Hellmut Fritzsche (auth.), Professor Fumiko Yonezawa (eds.)

By Hellmut Fritzsche (auth.), Professor Fumiko Yonezawa (eds.)

The Kyoto summer season Institute 1980 (KSI '80), dedicated to "Fundamental Physics of Amorphous Semiconductors", used to be held at examine Institute for primary Physics (RIFP), Kyoto collage, from 8-11 September, 1980. The KSI '80 was once the successor of the previous Institutes that have been held in July 1978 on "Particle Physics and Accelerator tasks" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 used to be attended through two hundred contributors, of which 36 have been from out of the country: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 used to be equipped via RIFP and directed through the Amorphous Semicon­ ductor team in Japan. many years in the past, we began to manage an interna­ tional assembly on amorphous semiconductors' as a satell ite assembly of the overseas convention on "Physics of Semiconductors" hung on September 1-5, 1980 in Kyoto. We later made up our minds to carry the assembly within the type of the Kyoto summer season Institute. The Kyoto summer time Institute is aimed to be whatever among a faculty and a convention. for that reason, the item of the KSI '80 was once to supply a chain of invited lectures and casual seminars on basic physics of amorphous semiconductors. No contributed paper used to be accredited, yet seminars have been open.

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Extra info for Fundamental Physics of Amorphous Semiconductors: Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8—11, 1980

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C. Chittick: J. Non-Cryst. Solids, 4. G. E. Spear: Phys. Rev. Letters, 5. E. G. Le Comber: J. No n-Cryst. Solids, 8-10, 727-738 (1972) 6. E. Spear: Proc. of 5th International Conference on Amorphous and Liquid Semiconductors, ed. by J. Stuke and W. Brenig, (Taylor and Francis)(1974)pp 1-16 44 1, 255-270 (1970) ~ 509-511 (1970) 7. A. G. E. Spear: J. Non-Cryst. Solids, 257 (1976) 239- 8. A. G. Le Comber: Proc. of 7th International Conference on Amorphous and Liquid Semiconductors, Edinburgh, ed. E.

1. J. C. Knights and G. Lucovsky, CRC Crit. Rev. Solid State Sciences, in press. N. Sol, D. Kaplan, D. Dieumegard, and D. Dubreuil, J. Non-Crystall. Solids 35/36, 291 (1980). M. L. Knotek, Solid State Commun. 17, 1431 (1975). J. C. Knights, J. Non-Crystall. SoTlds 35/36, 159 (1980). R. C. Frye and D. D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 11, 292 (1977). Surface Effects and Transport Properties in Thin FIlms of Hydrogenated Silicon 1. , Ecole Poly technique F-9ll28 Palaiseau, France The measurement of transport properties of hydrogenated amorphous silicon, in particular the variation of conductivity with temperature, provides an important test for existing theories [1].

Title, K. D. Pettit: Phys. Rev. B1, 2632 (1970) 16. J. Shevchik, W. Paul: J. No n-Cryst. Solids, 8-10, 381-387 (1972) 17. W. Beyer, J. Stuke: ref. 6, 251-258 (1974), see also Phys. Stat. Sol. (a) JQ, 511-520 (1975) 18. J. N. Connell, W. R. J. Temkin: Tetrahedrally Bonded Amorphous Semiconductors, ed. by M. Brodsky, S. Kirkpatrick and D. P. 27-32 19. W. J. N. D. Moustakas: Solid State Comm. ~ 969-972 (1976) 20. A. Triska, D. Dennison, H. Fritzsche: Bull. APS ~ 392 (1975) 21. H. Brodsky, M. J. Cuomo: Phys.

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