Microwave Physics and Techniques by E. L. Kollberg (auth.), Horst Groll, Ivan Nedkov (eds.)

By E. L. Kollberg (auth.), Horst Groll, Ivan Nedkov (eds.)

Microwave Physics and Techniques discusses the modelling and alertness of nonlinear microwave circuits and the issues of microwave electrodynamics and functions of magnetic and excessive Tc superconductor buildings. elements of complex equipment for the structural research of fabrics and of MW distant sensing also are thought of. the twin specialise in either HTSC MW equipment physics and MW excitation in ferrites and magnetic movies will foster the interplay of experts in those diverse fields.

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The extra terms are the contributions from the instantaneous transconductance and channel conductance dispersion. This type of Ids,RF dependence can be modelled with a frequency dependent factor, Pld: _ ~ - ~d~sll ~o + ( - -1) ~s 1 2 ] cosh (BVdJ (10) The dispersion effects of the gm can be taken into account by using the frequency dependence proposed in [4]: gm (f) ex ( l' l+v Iftr )2 (11) This can be incorporated in the model in the case of gm influenced by multiple trapping processes with different trapping frequencies ftr,L ..

25 d) c) Fig. 3 In the typical MESFETs, Fig. 3d, at the saturated drain voltages, transconductance is increasing with increasing gate voltage and its maximum is usually at positive gate voltages. Sometimes this voltage is so high, that the gate junction is already forward biased and there is a gate current. That is why values for Ipk and V pk should be selected carefully. Second term P2 of function \jf is positive and the transconductance maximum is at voltages higher than V pk. At Vpk the function \jf is 0, but there is only an inflection point in the drain current characteristics at this gate voltage.

A junction model available in the FET model in MDS (HP) was used to model C gs , Cgd and forward conduction characteristics of the HEMT Schottky diode. The most important and critical moment in the parameter extraction is the determination of two main models parameters - Ipk and Vpk. It is always possible to obtain a good fit for the drain current and first harmonic if you use a value of Ipk larger than I maxl2. The most common error in the extraction procedure is to perform the measurements with gate voltages not high enough to provide information about the maximum current Imax.

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